MtPh

In-situ Characterization of Atomic Layer Deposition (ALD)

date
26.06.2018 
time
03:00 PM - 04:00 PM 
speaker
Prof. Jiyoung Kim 
affiliation
Professor of Materials Sci. & Eng., The University of Texas at Dallas 
language
en 
main topic
Materials: Superconductors, Magnetic Materials, Nano Structures
subtopics
Physics: Condensed Matter (incl. Soft, Solid)
host
Ines Firlle 
abstract

Atomic Layer Deposition (ALD) has been widely utilized to deposit high quality high-k dielectrics with ultra-precise thickness controllability. However, during the initial few cycles of ALD, metal precursors and reactants are exposed to different environments because of a substrate unlike in the middle of ALD process. Anomalous initial growth behaviors are frequently observed at the initial ALD process. As devices are being continuously scaled down sub-10 nm node, it is critical to understand impacts of initial ALD process on interface characteristics as well as high-k dielectric deposition. Precursors and reactants for high-k dielectrics frequently exhibit strong interactions with a channel substrate, such as Si and III-V, during the first few cycles of ALD. Particularly, some of ALD precursors show a very high reactivity (or catalytic behavior) with a substrate at a processing temperature. For examples, La(fmd) enhances formation of La-silicate on Si substrate, while TMA (Trimethyl-Al) effectively remove native oxide at GaAs surface. On the other hand, some 2-D materials with hydrophobic nature, such as graphene and Mo2S, etc., would prevent appropriate adsorption of reactants on the basal plane, which causes non-uniform nucleation. If a chemical functionalization technique is applied to improve ALD nucleation process, performances of the channel would be frequently degraded. In this presentation, I am going to introduce in-situ XPS system clustered to thermal ALD to investigate surface reactions during the initial few half cycles of ALD on Si and III-V substrates. I will also discuss in-situ electrical characterization on 2D devices for initial few half cycles of ALD process.

 

Last update: 26.06.2018 00:06.

venue 

Leibniz Institut für Festkörper- und Werkstoffforschung Dresden (D2E.27, IFW Dresden) 
Helmholtzstraße 20
01069 Dresden
homepage
http://www.ifw-dresden.de 

organizer 

Leibniz Institut für Festkörper- und Werkstoffforschung Dresden (IFW)
Helmholtzstraße 20
01069 Dresden
homepage
http://www.ifw-dresden.de 
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