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Revisiting Cu in Bi2Te3 based compounds

Date
Jun 16, 2026
Time
9:00 AM - 10:00 AM
Speaker
Dr. Wenjie Xie
Affiliation
Technical University of Darmstadt
Language
en
Main Topic
Materialien
Host
Martina Javorka
Description
The effects of Cu impurities in bismuth telluride, discovered during thermoelectric device manufacturing, have been known for decades. However, the precise structural site occupied by Cu atoms and its resulting doping mechanism remain unclear. Cu is observed to increase charge carrier concentration in both p- and n-type Bi₂Te₃. This leads to two conflicting hypotheses: (1) Cu intercalates in the van der Waals gaps, acting as an electron donor, or (2) Cu substitutes for Bi/Sb, which would act as an electron acceptor—a model at odds with its n-type doping capability. This talk will elucidate these contradictory findings by employing the framework of defect chemistry. We will use existing experimental data to develop a general model that explains the doping behavior of Cu in bismuth telluride.
Links

Last modified: May 23, 2026, 7:39:49 AM

Location

Leibniz Institut für Festkörper- und Werkstoffforschung Dresden (D2E.27, IFW Dresden)Helmholtzstraße2001069Dresden
Homepage
http://www.ifw-dresden.de

Organizer

Leibniz Institut für Festkörper- und Werkstoffforschung DresdenHelmholtzstraße2001069Dresden
Homepage
http://www.ifw-dresden.de
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