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RRULE:FREQ=YEARLY;INTERVAL=1;BYMONTH=3;BYDAY=-1SU
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TZOFFSETFROM:+0200
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RRULE:FREQ=YEARLY;INTERVAL=1;BYMONTH=10;BYDAY=-1SU
END:STANDARD
END:VTIMEZONE
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UID:DSC-20341
DTSTART;TZID=Europe/Berlin:20231128T145000
SEQUENCE:1701153609
TRANSP:OPAQUE
DTEND;TZID=Europe/Berlin:20231128T162000
URL:https://www.dresden-science-calendar.de/calendar/en/detail/20341
LOCATION:TUD\,    
SUMMARY:Physics Colloquium / Dr. Maximilian Lederer: Vorstellung zur Habili
 tation - Hafnium Oxide: A Game-Changer for Nanoelectronic Devices and Syst
 ems
CLASS:PUBLIC
DESCRIPTION:Speaker: \nInstitute of Speaker: \nTopics:\nWillkommen\n Locati
 on:\n  Name: TUD ()\n  Street:   \n  City:  \n  Phone: \n  Fax: \nDescript
 ion: <p>Event announcement as pdf-Download (https://tu-dresden.de/mn/phys
 ik/ressourcen/dateien/physikalisches-kolloquium/2023-11-28-Phys_Kolloq-Led
 erer-WiSe2023.pdf).</p>  <p><strong>Abstract</strong>: Electric devices\,
  like transistors and memories\, are omnipresent in modern society. With t
 he downscaling of transistors to a few nanometers\, following Moore’s la
 w\, silicon oxide gate stacks reached their limitation in physical thickne
 ss due to tunnelling effects. Hafnium oxide\, as a high-k dielectric\, was
  found to circumvent this limitation and is used in the gate stacks of CMO
 S technology nodes smaller than 45 nm as well as DRAM technologies. These 
 developments toward higher permittivity led to the discovery of ferroelect
 ricity in hafnium oxide by Qimonda in Dresden 2008. Ferroelectric material
 s contain a permanent dipole in their ionic crystal structure that is swit
 chable by applying an electric field. As these dipole states can be interp
 reted as a 0- or 1-bit state\, ferroelectrics are highly interesting for t
 he application in non-volatile memories. This talk will provide an overvie
 w about recent developments in hafnium oxide technologies. On the one side
 \, highly sophisticated HfO2-based memory devices have been demonstrated\,
  even in highly scaled nodes. On the other hand\, the unique properties of
  hafnium oxide lead to many new applications and research fields: Pyroelec
 tric sensors\, piezoelectric nanoelectromechanical systems\, magnetoelectr
 ic spin-orbit devices\, non-linear optics\, neuromorphic devices and quant
 um computing.</p>  <p><strong>Short bio</strong>: Maximilian Lederer is w
 orking as lead scientist for advanced nanoelectronic materials at Fraunhof
 er IPMS\, Center Nanoelectronic Technologies. He studied material science 
 and engineering at Friedrich-Alexander-Universität Erlangen-Nürnberg a
 nd received his master degree in 2018. In 2022\, he received his Ph.D. deg
 ree in Physics from TU Dresden on the topic of ferroelectric hafnium oxide
  for non-volatile memories. Since 2019\, he is working at Fraunhofer IPMS
  and to date authored and co-authored more than 100 peer-reviewed journal 
 and conference papers. Main research topics include materials compatible w
 ith CMOS processes\, more specifically for ferroelectric devices\, spintro
 nic memories\, quantum computing and photonics.</p>
DTSTAMP:20260730T092357Z
CREATED:20231111T063558Z
LAST-MODIFIED:20231128T064009Z
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