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UID:DSC-14822
DTSTART;TZID=Europe/Berlin:20180813T113000
SEQUENCE:1534118736
TRANSP:OPAQUE
DTEND;TZID=Europe/Berlin:20180813T123000
URL:https://www.dresden-science-calendar.de/calendar/en/detail/14822
LOCATION:IFW\, Helmholtzstraße 2001069 Dresden
SUMMARY:Yan: Single crystal growth and characterization for thermoelectric 
 and topological materials
CLASS:PUBLIC
DESCRIPTION:Speaker: Prof. Xinlin Yan\nInstitute of Speaker: Technische Uni
 versität Wien\, Institut für Festkörperphysik\nTopics:\nMaterialien\, P
 hysik\n Location:\n  Name: IFW (D2E.27\, IFW Dresden)\n  Street: Helmholtz
 straße 20\n  City: 01069 Dresden\n  Phone: \n  Fax: \nDescription: The us
 e of single crystals is vital for the study of tensor properties of materi
 als and for the study where the effects from the grain boundaries and seco
 ndary phases (in polycrystalline samples) should be eliminated. In this ta
 lk\, I will present my recent work on intermetallic type-I clathrates Ba8(
 Cu\,Ga\,Ge)46\, which could be promising thermoelectric materials\, and ha
 lf Heusler phase CePt1-xPdxBi\, which could show nontrivial topology\, foc
 using on single crystal growth\, characterization\, and transport properti
 es. I will demonstrate that vacancies exist in the framework of the crysta
 l structure of Ge-based type-I clathrates\, and Ga substitution for framew
 ork atoms can fill these vacancies\, which increases the charge carrier mo
 bility strongly and thus leads to enhanced thermoelectric performance. In 
 the half Heusler system CePt1-xPdxBi\, the isostructural\, isoelectronic\,
  and isosize substitution of Pt by Pd is likely to change only the spin-or
 bit coupling (SOC)\, which is a very important parameter to stabilize the 
 topologically nontrivial electronic states\, due to the large mass differe
 nce between Pt and Pd. We observe a semiconductor to metallic-like/semimet
 al transition with increasing the Pd substitution\, demonstrating the dram
 atic effect of the SOC.
DTSTAMP:20260815T060609Z
CREATED:20180731T000702Z
LAST-MODIFIED:20180813T000536Z
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