FWI Institutskolloquium: InSe rediscovered: A van der Waals crystal for electronics and optoelectronics

Date

Jun 30, 2017

Time

10:30 AM - 12:00 PM

Speaker

Prof. Amalia Patane, Univ. Nottingham, UK

Language

en

Main Topic

Materialien

Other Topics

Physik

Host

Prof. Dr. Manfred Helm (2260), Susann Gebel (2345)

Description

Abstract: Solutions to global challenges require a radical shift from traditional materials and present Si and III-V semiconductor technologies. The development of van de Waals (vdW) crystals and heterostructures has led to the discovery of a new generation of electronic materials. Their electronic properties can be modified not only by careful selection of the materials within the stack, but also by adjusting the built-in strain and relative orientation of the component layers. Among the vdW crystals, the metal chalcogenide InSe combines and maintains remarkable electronic and optical properties, even in thin layered crystals. Two-dimensional (2D) InSe layers display strong quantum confinement effects1-2, near-infrared photosensitivity3, and high room temperature electron mobility2. Furthermore, these properties are compatible with and complement other materials, such as indium oxide4, and the well-established vdW crystals hexagonal boron nitride and graphene, thus enabling the fabrication of new functional devices. From the epitaxial growth and fabrication of vdW heterostructures to the demonstration of prototype devices, this work will discuss how these layers can provide a platform for scientific investigations and new routes to 2D electronics and optoelectronics. 1. G.W. Mudd et al., Sci. Reports 6, 39619 (2016). 2. D.A. Bandurin et al. Nature Nanotechnology 12, 223, (2017). 3. G.W. Mudd et al., Adv. Materials 27, 3760 (2015). 4. N. Balakrishnan et al. 2D Materials 4, 25043 (2017).

Last modified: Jun 30, 2017, 10:01:46 AM