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UID:DSC-22764
DTSTART;TZID=Europe/Berlin:20260324T090000
SEQUENCE:1774334133
TRANSP:OPAQUE
DTEND;TZID=Europe/Berlin:20260324T100000
URL:https://www.dresden-science-calendar.de/calendar/de/detail/22764
LOCATION:IFW\, Helmholtzstraße 2001069 Dresden
SUMMARY:Hiller: Application of dielectric ALD-thin films for a novel Silico
 n-doping method
CLASS:PUBLIC
DESCRIPTION:Speaker: Prof. Dr. Daniel Hiller\nInstitute of Speaker: TU Berg
 akademie Freiberg\nTopics:\n\n Location:\n  Name: IFW (D2E.27\, IFW Dresde
 n)\n  Street: Helmholtzstraße 20\n  City: 01069 Dresden\n  Phone: \n  Fax
 : \nDescription: Conventional impurity doping of nanostructured Si-based t
 ransistor structures is subject to several obstacles\, in particular: (i) 
 deteriorated charge carrier mobility due to ionized impurity scattering ca
 using both slower switching speeds and increased heat dissipation\, (ii) r
 andom dopant fluctuations (RDF)\, (iii) nano-size effects impeding high do
 ping efficiencies due to dielectric mismatch\, quantum confinement\, etc. 
 Moreover\, conventional impurity doping is not cryo-compatible because cha
 rge carriers freeze out – unless degenerate doping levels beyond Mott&am
 p\;#039\;s semiconductor-metal transition are considered. Although it is i
 nevitable to control the charge carrier type and density in Si for any dev
 ice application\, it is not mandatory to incorporate dopants into the semi
 conductor itself. Here\, we present a method that allows to relocate accep
 tor dopants from substitutional sites in the Si or SiGe lattice into an ad
 jacent SiO2 layer. Modulation Acceptor Doping (MAD) uses unoccupied accept
 or states generated by specific trivalent acceptor impurities incorporated
  in SiO2 with energy levels below the Si valence band edge. A direct and p
 ermanent ionization of these acceptor states is realized by electron-tunne
 ling from the adjacent Si\, which creates holes as majority charge carrier
 s. This p-type doping method provides higher hole mobilities\, self-adjust
 s via Coulomb blockade its ionization density to minimize RDF\, is not sig
 nificantly affected by nano-size effects\, and cannot be frozen out by cry
 ogenic temperatures. In this presentation\, different modulation acceptor 
 elements\, as predicted by density functional theory (DFT) and deposited v
 ia ALD ultra-thin films\, are compared. In addition\, the application of M
 AD to transistor test devices is demonstrated.
DTSTAMP:20261002T012257Z
CREATED:20260317T064006Z
LAST-MODIFIED:20260324T063533Z
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