Christoforos Theodorou: "Noise and variability in advanced microelectronic devices and circuits"

Datum

11.06.2024

Zeit

11:00 - 12:00

Sprecher

Christoforos Theodorou

Zugehörigkeit

CROMA laboratory, Grenoble, France

Sprache

en

Hauptthema

Physik

Andere Themen

Elektro- u. Informationstechnik, Physik

Host

Dr. Dimitrios Prousalis

Beschreibung

Interessierte sind herzlich eingeladen am Dienstag, 11. Juni 2024 um 11:00 Uhr in den Toepler-Bau der TU Dresden zu kommen (Raum TOE/315 (https://navigator.tu-dresden.de/etplan/toe/02/raum/128102.1160)) und Dr. Christoforos Theodorou, einen CNRS Forscher des CROMA Labors in Grenoble, Frakreich, zu hören. Der Vortragstitel lautet: „Noise and variability in advanced microelectronic devices and circuits“ und der Vortrag endet spätestens 12:00 Uhr.

Sollten Sie die Vorlesung lieber online verfolgen wollen, finden Sie hier den Link zur Videokonferenz (https://t1p.de/20240611_Lecture). (https://t1p.de/20240524_Lecture)

Abstract:

Two of the most determining limiting factors for the performance of an electronic circuit are the level of intrinsic noise and the percentage of yield within the acceptable limits of operation. In particular, the excess (frequency-dependent) noise can be detrimental to the dynamic stability and linearity, especially when it is characterized by very sudden, high-amplitude pulse-like changes, as in the case of Random Telegraph Noise (RTN). The latter, along with low-frequency noise (LFN, also called 1/f noise), are caused by the trapping/de-trapping of carriers at volume or states of semiconductor devices. In parallel with these noise phenomena, and especially in memory switching devices such as resistive memories, there is a very significant variation in electrical parameters and behavior from device-to-device, which can seriously limit the circuit design possibilities, as well as the final circuit-to-circuit variability. These types of noise and variability become even more significant at a micro- or nano-scale level because their amplitude is inversely proportional to the device area. In this talk, the origin of these effects will be discussed for devices ranging from advanced transistors to OxRAM-based memristors, along with methods to experimentally study them and model them, in order to reach more precise and reliable circuit-level simulations. Moreover, a short presentation of our laboratory’s research activities will also be addressed.

Links

• Webseite
• Termindetails auf den Webseiten der TU Dresden (https://tu-dresden.de)

Letztmalig verändert: 11.06.2024, 07:37:41