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UID:DSC-19921
DTSTART;TZID=Europe/Berlin:20230623T103000
SEQUENCE:1687498791
TRANSP:OPAQUE
DTEND;TZID=Europe/Berlin:20230623T120000
URL:https://www.dresden-science-calendar.de/calendar/de/detail/19921
LOCATION:HZDR\, Bautzner Landstraße 40001328 Dresden
SUMMARY:Zhao: FWI Institutskolloquium: Toward Energy Efficiency Electronics
  with Nanowire Transistors
CLASS:PUBLIC
DESCRIPTION:Speaker: Prof. Qing-Tai Zhao\, Forschungszentrum Juelich\nInsti
 tute of Speaker: \nTopics:\n\n Location:\n  Name: HZDR (801/P142 - Seminar
 raum FWO)\n  Street: Bautzner Landstraße 400\n  City: 01328 Dresden\n  Ph
 one: \n  Fax: \nDescription: Abstract: Gate-all-around (GAA) nanowire (NW)
  FETs have emerged as highly promising candidates for ultra-short channel 
 FETs due to their superior electrostatics. In this presentation\, I will p
 resent our research on Si and GeSn nanowire GAA FETs. The horizontal Si na
 nowires have been scaled down to a diameter of 5 nm in our devices. The op
 timized process and device layout enable steep slope switching at cryogeni
 c temperatures\, which has significant implications for the development of
  cryogenic computing applications. We demonstrate the use of GeSn\, which 
 exhibits much higher carrier mobilities than silicon\, by designing hetero
 structures for p-FET and n-FET with a vertical nanowire configuration. We 
 show that the GeSn channel n-FET exhibits significantly higher electron mo
 bility than the reference Ge devices. The low-temperature characteristics 
 of the GeSn transistor also hold great potential for cryogenic application
 s.
DTSTAMP:20260805T153614Z
CREATED:20230523T053750Z
LAST-MODIFIED:20230623T053951Z
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