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UID:DSC-19497
DTSTART;TZID=Europe/Berlin:20230223T110000
SEQUENCE:1677134295
TRANSP:OPAQUE
DTEND;TZID=Europe/Berlin:20230223T120000
URL:https://www.dresden-science-calendar.de/calendar/de/detail/19497
LOCATION:HZDR\, Bautzner Landstraße 40001328 Dresden
SUMMARY:Busse: FWI Seminar: Epitaxial 2D materials beyond graphene
CLASS:PUBLIC
DESCRIPTION:Speaker: Prof. Dr. Carsten Busse\, Universität Siegen\nInstitu
 te of Speaker: \nTopics:\n\n Location:\n  Name: HZDR (712/138 - Versammlun
 gsraum)\n  Street: Bautzner Landstraße 400\n  City: 01328 Dresden\n  Phon
 e: \n  Fax: \nDescription: Transition metal dichalcogenides (TMDCs) form a
  rich family of two-dimensional materials containing metals\, semiconducto
 rs and insulators. Their tunable chemical composition with the general for
 m MX2 (M: transition metal\, X: S\, Se\, Te) makes them more versatile tha
 n monoelemental materials as graphene. Epitaxial growth on well-defined su
 bstrates is a method that can produce high-quality TMDC- monolayers\, both
  for applications as well as for fundamental studies of their properties u
 sing surface science methods. We grow MoS2\, WS2 and TaS2 using molecular 
 beam epitaxy (MBE) under ultra-high-vacuum conditions on weakly interactin
 g substrates Au(111) and graphene / Ir(111) and determine their geometric 
 structure using scanning tunneling microscopy (STM) and the method of x-ra
 y standing waves (XSW) as well as their electronic structure by scanning t
 unneling spectroscopy (STS) and angle- resolved photoemission spectroscopy
  (ARPES). For tantalum sulfide\, we disover a novel Ta-rich phase when the
  growth takes place under sulfur-poor conditions. In a laterally stitched 
 heterostructure of the semiconductors MoS2 and WS2\, we can map the hybrid
 ization of the bands across the junction. We find type-II band alignment a
 nd a very narrow electronic transition region.
DTSTAMP:20260520T005559Z
CREATED:20230201T063647Z
LAST-MODIFIED:20230223T063815Z
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