FWI Institutskolloquium: Hyperdoping of group-IV Semiconductors by Pulsed Laser Melting

Datum

03.11.2022

Zeit

10:30 - 12:00

Sprecher

Prof. Enrico Napolitani

Zugehörigkeit

University of Padova

Sprache

en

Hauptthema

Materialien

Host

Dr. Yonder Berencén, Susann Gebel

Beschreibung

Abstract: Doping of group-IV semiconductors at concentrations well above equilibrium solubilities, so called ‘hyperdoping’, is crucial for advanced applications in several fields, such as nanoelectronics, photonics, plasmonics, photovoltaics, quantum computing (solid state state qubits), etc. This talk will review recent results obtained with the Pulsed Laser Melting (PLM) technique which, thanks to the ultra-fast solidification of laser-induced liquid layers, enables record solubilities in most systems. The focus will be on the structural, electrical and optical properties of Ge hyperdoped, both n-type and p-type, on Ge alloyed with Sn, and on Si hyperdoped.s. We’ll show that, during PLM, several complex phenomena take place which have to be investigated and properly controlled for material development, such as dopant clustering (both in the liquid and in the solid phase), dopant segregation, in-diffusion of contaminants, evolution of extended defects and strain, surface morphology, etc. The stability of the metastable layers upon post-PLM thermal processes need also to be addressed. Beyond record solubilities and the possibility to tailor extended defects and strain, PLM provides also excellent spatial and temperature confinement, with sample heating limited to the uppermost layers and with extremely sharp junctions, which makes PLM extremely interesting for future device development.

Letztmalig verändert: 03.11.2022, 07:35:20