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UID:DSC-14625
DTSTART;TZID=Europe/Berlin:20180626T150000
SEQUENCE:1529971578
TRANSP:OPAQUE
DTEND;TZID=Europe/Berlin:20180626T160000
URL:https://www.dresden-science-calendar.de/calendar/de/detail/14625
LOCATION:IFW\, Helmholtzstraße 2001069 Dresden
SUMMARY:Kim: In-situ Characterization of Atomic Layer Deposition (ALD) 
CLASS:PUBLIC
DESCRIPTION:Speaker: Prof. Jiyoung Kim\nInstitute of Speaker: Professor of 
 Materials Sci. & Eng.\, The University of Texas at Dallas\nTopics:\nMateri
 alien\, Physik\n Location:\n  Name: IFW (D2E.27\, IFW Dresden)\n  Street: 
 Helmholtzstraße 20\n  City: 01069 Dresden\n  Phone: \n  Fax: \nDescriptio
 n: Atomic Layer Deposition (ALD) has been widely utilized to deposit high 
 quality high-k dielectrics with ultra-precise thickness controllability. H
 owever\, during the initial few cycles of ALD\, metal precursors and react
 ants are exposed to different environments because of a substrate unlike i
 n the middle of ALD process. Anomalous initial growth behaviors are freque
 ntly observed at the initial ALD process. As devices are being continuousl
 y scaled down sub-10 nm node\, it is critical to understand impacts of ini
 tial ALD process on interface characteristics as well as high-k dielectric
  deposition. Precursors and reactants for high-k dielectrics frequently ex
 hibit strong interactions with a channel substrate\, such as Si and III-V\
 , during the first few cycles of ALD. Particularly\, some of ALD precursor
 s show a very high reactivity (or catalytic behavior) with a substrate at 
 a processing temperature. For examples\, La(fmd) enhances formation of La-
 silicate on Si substrate\, while TMA (Trimethyl-Al) effectively remove nat
 ive oxide at GaAs surface. On the other hand\, some 2-D materials with hyd
 rophobic nature\, such as graphene and Mo2S\, etc.\, would prevent appropr
 iate adsorption of reactants on the basal plane\, which causes non-uniform
  nucleation. If a chemical functionalization technique is applied to impro
 ve ALD nucleation process\, performances of the channel would be frequentl
 y degraded. In this presentation\, I am going to introduce in-situ XPS sys
 tem clustered to thermal ALD to investigate surface reactions during the i
 nitial few half cycles of ALD on Si and III-V substrates. I will also disc
 uss in-situ electrical characterization on 2D devices for initial few half
  cycles of ALD process.
DTSTAMP:20260519T003748Z
CREATED:20180608T075002Z
LAST-MODIFIED:20180626T000618Z
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