Continuum modeling of heteroepitaxy ( I / III )

Datum

03.03.2016

Zeit

09:20 - 10:50

Sprecher

Marco Salvalaglio

Zugehörigkeit

University of Milano Biocca

Sprache

en

Hauptthema

Mathematik

Andere Themen

Mathematik

Host

Prof. Dr. A. Voigt

Beschreibung

This series of lectures aims at Master‘s and PhD students in mathematics and offers a first glimpse into topics which are not routinely taught in our MSc/PhD programme. The emphasis is to introduce new concepts and techniques, and not to present full mathematical details. Abstract: Various deposition techniques leading to heteroepitaxial growth are not conned to academic (or research) laboratories anymore. Microelectronic and/or optoelectronic industries are nowadays relying on heteroepitaxy in the production of various devices. However, full control of the growth dynamics is still far to be achieved. Simulation models can be precious in limiting the parameter space to be sampled while aiming at lms/nanostructures with the desired properties. In order to be appealing (and useful) to an applied audience, such models must yield predictions directly comparable with experimental data. This implies matching typical time scales and sizes, while oering a satisfactory description of the physics involved. It is the aim of the present review to show that continuum models of heteroepitaxy do provide a promising tool to comply with the above requirements. In particular, we shall review how microscopic processes taking place during growth, such as 3D island formation, faceting, intermixing, etc., can be conveniently tackled within continuum approaches. Several examples, mainly related to semiconductor physics, are illustrated and a close comparison with experiments is shown. Current limitations and future research directions are critically discussed.

Links

• Graduate Lectures in Mathematics

Letztmalig verändert: 02.02.2016, 18:15:50